1 emitter 2 base 3 collector 2SA1579 features high breakdown voltage. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5 v collector current i c -50 ma collector power dissipation p c 0.2 w junction temperature tj 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo i c =-50a -120 v collector-emitter breakdown voltage bv ceo i c =-1ma -120 v emitter-base breakdown voltage bv ebo i e =-50a -5 v collector cutoff current i cbo v cb =-100v -0.5 a emitter cutoff current i ebo v eb =-4v -0.5 a collector-emitter saturation voltage v ce(sat) i c =-10ma, i b =-1ma -0.5 v dc current transfer ratio h fe v ce =-6v, i c =-2ma 180 560 output capacitance f t v ce =-12v, i e = 2ma, f=100mhz 140 mhz transition frequency c ob v cb =-12v, i e =0a, f=1mhz 3.2 pf h fe classification marking rr rs rank r s hfe 180 390 270 560 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors product specification 4008-318-123 free datasheet http:///
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